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Numerical Simulation is an essential mean of achieving a deep insight of complex physical phenomena, especially when non-linearities and small dimensions limit the descriptive capabilities of measurements.

Real-world applications require suitable numerical algorithms for solving coupled non-linear partial differential equations (PDEs) on a discretized domain. Correclty modeling ultrasound wave propagation in tissues is crucial for the design of state-of-the-art ultrasonic systems. Moreover, fluid-dynamic simulations are fundamental when dealing with multi-physics problems such as those involved in the analysis of micromechanical electrical systems (MEMS).

Finally, the synergistic combination of process, device and circuit simulation and modelling tools, known as technology computer-aided design (TCAD), is a crucial enabling methodology that can support technology progress by reducing development cycle times and costs in semiconductor industry.

Current Projects

Nonlinear Acoustics Simulation

Numerical modeling of nonlinear ultrasound (US) beam propagation plays a key role in designing state-of-the-art medical US systems due to the improvements in image quality coming from the use of second and higher harmonic overtones. Describing the combined effects of diffraction, absorption and nonlinearity, the Khokhlov-Zabolotskaya-Kuznetsov (KZK) equation is the most commonly used model to address this simulation problem. >>More Info

FEM Simulation

The Finite Element Method (FEM) is an extremely powerful numerical technique, which can be used for solving different type of partial differential equations on complex geometrical domains. The FEM method, and its extension to the Navier-Stokes equations via the Streamline Upwindins Petrov Galerkin algorithm, is used for predicting the flow and temperature fields inside MEMS devices. >> More Info

TCAD - Mesh Generation

CAD tools for the simulation of advanced electronic devices are fundamental to the analysis and development of new technology generations. However, complexity of the structure and behavior of such devices progressively increases the dimensionality of the analyzed problem. The trade-off between accuracy and computational cost of the simulation is especially influenced by domain discretization.>>More Info

TCAD - Investigation of Variability in FinFETs

Short-channel effect control, suppression of gate leakage and mitigation of process variations are severe challenges to further employment of the planar MOSFET architecture. FinFET is one of the favorite alternatives. However, variability limits mainstream employment of these devices. Despite a high immunity to random dopant fluctuations (RD), residual process variations in FinFETs are mainly due to the line-edge roughness (LER) of several printed features, including the fin, top- and sidewall-gates. >>More Info

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